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Home › Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing

Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing

US Patent 5998225 · Granted Dec 7, 1999

Estimated economic value: $53,019,000 ⓘ

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