Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method capable of accurately simulating ion implantation at a high speed

Method capable of accurately simulating ion implantation at a high speed

US Patent 5977551 · Granted Nov 2, 1999

Estimated economic value: $24,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electro-static discharge protection device2011
Electro-static discharge protection device2008
MOS type semiconductor device having electrostatic discharge protection arrangem2007
Multifinger-type electrostatic discharge protection element2006
Ion implantation simulation method2004
Semiconductor device having a protective circuit2003
Ion implantation process simulation device realizing accurate interpolation of i1999
Simulation method for high resolution deep impurity profile1999
Method, apparatus and computer program product for simulating ion implantation1999
Ion implantation simulation method1999
Method for impurity distribution simulation1999
Method and system for simulating ion implantation for performing simulation with1998