{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode", "item": "https://www.patentleaderboard.com/patent/5966606"}]}
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Home › Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode

Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode

US Patent 5966606 · Granted Oct 12, 1999

Estimated economic value: $47,000 ⓘ

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