Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8643139 | Semiconductor device | — | 2014-02-04 |
| 8324709 | Semiconductor device | — | 2012-12-04 |
| 8013421 | Semiconductor device | — | 2011-09-06 |
| 6518075 | Method of forming S/D extension regions and pocket regions based on formulated relationship between design and measured values of gate length | — | 2003-02-11 |
| 6489236 | Method for manufacturing a semiconductor device having a silicide layer | Kiyotaka Imai | 2002-12-03 |
| 6486012 | Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof | — | 2002-11-26 |
| 6436783 | Method of forming MOS transistor | Nobuaki Hamanaka | 2002-08-20 |
| 6432776 | Method of manufacturing semiconductor device | — | 2002-08-13 |
| 6362059 | Production of a semiconductor device having a P-well | Katsuhiko Fukasaku | 2002-03-26 |
| 6300239 | Method of manufacturing semiconductor device | — | 2001-10-09 |
| 6261889 | Manufacturing method of semiconductor device | — | 2001-07-17 |
| 6166413 | Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof | — | 2000-12-26 |
| 6127711 | Semiconductor device having plural air gaps for decreasing parasitic capacitance | — | 2000-10-03 |
| 5966606 | Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode | — | 1999-10-12 |
| 5780896 | Semiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereof | — | 1998-07-14 |