Atsuki Ono has been granted 15 US patents while listed as an inventor at Nec . The first was granted in 1998 and the most recent in February 2014. Atsuki Ono ranks #307,048 of 4,157,543 US inventors in our database (top 7.4%). Patent records list Atsuki Ono in Tokyo, JP.
Patents per Year Patents granted per year, 1998 to 2014 Bar chart with a peak of 5 patents in 2002. peak 5 1998: 1 patents 1998 1999: 1 patents 1999 2000: 2 patents 2000 2001: 2 patents 2001 2002: 5 patents 2002 2003: 1 patents 2003 2011: 1 patents 2011 2012: 1 patents 2012 2014: 1 patents 2014
Issued Patents All Time
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Showing 1–15 of 15 patents
Patent # Title Co-Inventors Date Approx Value ⓘ
8643139 Semiconductor device — 2014-02-04
8324709 Semiconductor device — 2012-12-04
8013421 Semiconductor device — 2011-09-06
6518075 Method of forming S/D extension regions and pocket regions based on formulated relationship between design and measured values of gate length — 2003-02-11
$8,000
6489236 Method for manufacturing a semiconductor device having a silicide layer Kiyotaka Imai 2002-12-03
$15,000
6486012 Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof — 2002-11-26
$9,000
6436783 Method of forming MOS transistor Nobuaki Hamanaka 2002-08-20
$10,000
6432776 Method of manufacturing semiconductor device — 2002-08-13
$10,000
6362059 Production of a semiconductor device having a P-well Katsuhiko Fukasaku 2002-03-26
$32,000
6300239 Method of manufacturing semiconductor device — 2001-10-09
$28,000
6261889 Manufacturing method of semiconductor device — 2001-07-17
$27,000
6166413 Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof — 2000-12-26
$60,000
6127711 Semiconductor device having plural air gaps for decreasing parasitic capacitance — 2000-10-03
$89,000
5966606 Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode — 1999-10-12
$47,000
5780896 Semiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereof — 1998-07-14
$12,000
