Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride/oxynitride films

Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride/oxynitride films

US Patent 5940735 · Granted Aug 17, 1999

Estimated economic value: $2,185,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods, systems and apparatus for manipulating particles2021
Methods and systems for manipulating particles using a fluidized bed2019
Apparatus for manipulating particles using at least one chamber having an inlet 2017
Activity-driven capacitance reduction to reduce dynamic power consumption in an 2016
Methods and systems for manipulating particles using a fluidized bed2016
Biological-chemical treatment of liquid organic wastewater2016
Methods and systems for manipulating particles using a fluidized bed2015
Shallow trench isolation (STI) with trench liner of increased thickness2011
Shallow trench isolation (STI) with trench liner of increased thickness2011
Formation of high voltage transistor with high breakdown voltage2011
Heat shock protein-based vaccines and immunotherapies2008
Zero-power programmable memory cell2008