Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field emission device with over-etched gate dielectric

Field emission device with over-etched gate dielectric

US Patent 5902165 · Granted May 11, 1999

Estimated economic value: $43,056,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Telecommunications switch array with thyristor addressing2007
In-situ randomization and recording of wafer processing order at process tools2005
Thyristor switch for microwave signals2005
In-situ randomization and recording of wafer processing order at process tools2005
Crosstalk reduction in a crosspoint thyristor switching array using a shielded d2005
Thyristor switch for microwave signals2004
In-situ randomization and recording of wafer processing order at process tools2004
Crosspoint microwave switching architecture for optical telecommunications2003
Telecommunications switch array with thyristor addressing2003
Reduction of the probability of interlevel oxide failures by minimization of lea2002
Bistable field emission display device using secondary emission2000
Method and system for enhancing the identification of causes of variations in th1999