Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating dynamic random access memory (DRAM) by simultaneous formation of tungsten bit lines and tungsten landing plug contacts

Method for fabricating dynamic random access memory (DRAM) by simultaneous formation of tungsten bit lines and tungsten landing plug contacts

US Patent 5895239 · Granted Apr 20, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems for displaying images and manufacturing methods for display panels2013
Manufacture method and structure of a nonvolatile memory2010
Manufacturing method of reflective layer of display device, reflective LCD devic2009
Memory capable of storing information and the method of forming and operating th2009
High density memory array system2008
Fringing field induced localized charge trapping memory2008
Nonvolatile memory with spacer trapping structure2007
Process for fabricating non-volatile memory by tilt-angle ion implantation2007
Memory array2006
Mask ROM and the method of forming the same and the scheme of reading the device2006
Nonvolatile memory capable of storing multibits binary information and the metho2005
Nonvolatile memory with undercut trapping structure2005