Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for planarizing TEOS SiO.sub.2 filled shallow isolation trenches

Method for planarizing TEOS SiO.sub.2 filled shallow isolation trenches

US Patent 5874345 · Granted Feb 23, 1999

Estimated economic value: $8,993,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing a substrate by spraying particles onto a compact film of so2019
Device with deformable shell including an internal piezoelectric circuit2019
Device with deformable shell including an internal piezoelectric circuit2019
Graphene interposer and method of manufacturing such an interposer2018
Method of fabrication of a FET transistor having an overlapped gate2018
Method for fabricating auto-aligned interconnection elements for a 3D integrated2018
Process for depositing a compact film of particles on the internal surface of a 2018
Thermal energy harvesting optimization with bistable elements and collaborative 2018
Method for transferring objects onto a substrate using a compact particle film, 2018
Superimposed transistors with auto-aligned active zone of the upper transistor2017
Method for producing interconnections for 3D integrated circuit2017
Facility and method for depositing a width adjustable film of ordered particles 2017