Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › DSAD process for deposition of inter layer dielectric

DSAD process for deposition of inter layer dielectric

US Patent 5872064 · Granted Feb 16, 1999

Estimated economic value: $164,702,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Polarization splitter-rotator having silicon based waveguide with silicon nitrid2025
Techniques for singulating photonics die with optical quality edge2025
Cost effective radio frequency impedance matching networks2024
Polarization splitter-rotator having silicon based waveguide with silicon nitrid2024
Techniques for wafer level die testing using sacrificial structures2023
RF power source operation in plasma enhanced processes2023
Techniques for on-chip polarization management using polarizing waveguides2021
Techniques for on-chip polarization management2021
Deposition-selective etch-deposition process for dielectric film gapfill2010
Deposition-selective etch-deposition process for dielectric film gapfill2010
Plasma processes for depositing low dielectric constant films2009
Contact metallization scheme using a barrier layer over a silicide layer2009