Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low temperature method of forming gate electrode and gate dielectric

Low temperature method of forming gate electrode and gate dielectric

US Patent 5858843 · Granted Jan 12, 1999

Estimated economic value: $79,273,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Compositional engineering of Schottky diode2025
Integrated circuit devices with FinFETs over gate-all-around transistors2025
Integrated circuit assemblies with stacked compute logic and memory dies2025
ESD protection decoupled from diffusion2025
Backend electrostatic discharge diode apparatus and method of fabricating the sa2025
Monolithic memory stack2024
Method for fabricating transistor with thinned channel2024
Double-gated ferroelectric field-effect transistor2024
Antiferroelectric gate dielectric transistors and their methods of fabrication2023
Thin film tunnel field effect transistors having relatively increased width2023
Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circui2023
1S-1T ferroelectric memory2023