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Home › Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback

Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback

US Patent 5726085 · Granted Mar 10, 1998

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