Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device

Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device

US Patent 5674777 · Granted Oct 7, 1997

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for multiple step directional patterning2025
Method of forming a semiconductor device2025
Etch apparatus for compensating shifted overlayers2024
Method for fabricating semiconductor device2024
Method of forming a semiconductor device2023
Air purifying prompting system2023
Flash memory structure and method of manufacturing the same2019
Method of making a semiconductor device2019
Semiconductor device and method of manufacturing the same2018
High energy density and low leakage electronic devices2017
Field effect transistor structure with gate structure having a wall and floor po2017
Three-dimensional non-volatile memory structure and manufacturing method thereof2017