Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of etching contact openings with reduced removal rate of underlying electrically conductive titanium silicide layer

Method of etching contact openings with reduced removal rate of underlying electrically conductive titanium silicide layer

US Patent 5658425 · Granted Aug 19, 1997

Estimated economic value: $30,006,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transportation platform tracking system and method for configuring a transportat2019
Guide for assisting sails over stanchions2005
Lower leg rolling apparatus1998
Topology induced plasma enhancement for etched uniformity improvement1998
Topology induced plasma enhancement for etched uniformity improvement1995
Method of etching vias without sputtering of underlying electrically conductive 1993
Method of etching vias without sputtering of underlying electrically conductive 1993
Method of etching vias without sputtering of underlying electrically conductive 1993
Phase-stepping interferometry1991