Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology

Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology

US Patent 5624867 · Granted Apr 29, 1997

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cocktail smoker2025
Vertical device having a protrusion source2025
Contact with a silicide region2025
Vertical device having a protrusion source2024
Contact structure and formation thereof2022
Contact with a silicide region2022
Method of forming isolation layer2022
Semiconductor device with multiple threshold voltage and method of fabricating t2021
Vertical device having a protrusion structure2020
Method of forming isolation layer2020
Formation method of interconnection structure of semiconductor device2020
Method of forming a contact with a silicide region2020