Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a monolithic semiconductor integrated circuit having an N-channel JFET

Method of forming a monolithic semiconductor integrated circuit having an N-channel JFET

US Patent 5618688 · Granted Apr 8, 1997

Estimated economic value: $14,533,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Field emission device having metal hydride hydrogen source2003
Method of manufacturing vacuum gap dielectric field emission triode and apparatu2003
Sensing circuit for capturing a pixel signal2000
Field emission device having a vacuum bridge focusing structure and method2000
Electrochemical capacitor with solid electrolyte1999
Electrochemical capacitor with hybrid polymer polyacid electrolyte1998
Traveling crane1995
Isolated well and method of making1995
Method for optimization of digital circuit delays1994
Forming a vertical PNP transistor1994
Fault detection circuit1994
Method of forming isolated wells in the fabrication of BiCMOS devices1993