Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOS-controlled power semiconductor component for high voltages

MOS-controlled power semiconductor component for high voltages

US Patent 5616938 · Granted Apr 1, 1997

Estimated economic value: $338,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide superjunction power semiconductor device and method for manufact2021
Area efficient floating field ring termination2020
Power semiconductor device with floating field ring termination2020
Junction barrier Schottky rectifier2017
Power semiconductor device and method for manufacturing such a power semiconduct2014
Power semiconductor device2012
Bipolar transistor with an insulated gate electrode2003
Gate turn-off thyristor for high blocking voltage and small component thickness1998
Turn-off, MOS-controlled, power semiconductor component1997
Power semiconductor component with transparent emitter and stop layer1997
Controllable power semiconductor component1997
Semiconductor diode in which electrons are injected into a reverse current1997