Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11031473 | Silicon carbide superjunction power semiconductor device and method for manufacturing the same | Lars Knoll, Marco Bellini, Renato Minamisawa, Umamaheswara Vemulapati | 2021-06-08 |
| 10629677 | Area efficient floating field ring termination | Umamaheswara Vemulapati | 2020-04-21 |
| 10566463 | Power semiconductor device with floating field ring termination | Umamaheswara Vemulapati, Marco Bellini | 2020-02-18 |
| 9659927 | Junction barrier Schottky rectifier | Andrei Mihaila | 2017-05-23 |
| 8829563 | Power semiconductor device and method for manufacturing such a power semiconductor device | Munaf Rahimo, Marco Bellini, Maxi Andenna, Iulian Nistor | 2014-09-09 |
| 8304814 | Power semiconductor device | — | 2012-11-06 |
| 6576936 | Bipolar transistor with an insulated gate electrode | Hans-Rudolf Zeller | 2003-06-10 |
| 5710445 | Gate turn-off thyristor for high blocking voltage and small component thickness | Simon Eicher | 1998-01-20 |
| 5698867 | Turn-off, MOS-controlled, power semiconductor component | Raymond Vuilleumier | 1997-12-16 |
| 5668385 | Power semiconductor component with transparent emitter and stop layer | Klas Olof Lilja | 1997-09-16 |
| 5661315 | Controllable power semiconductor component | Reinhold Bayerer, Thomas Stockmeier | 1997-08-26 |
| 5619047 | Semiconductor diode in which electrons are injected into a reverse current | — | 1997-04-08 |
| 5616938 | MOS-controlled power semiconductor component for high voltages | — | 1997-04-01 |
| 5491351 | Gate turn-off thyristor | Peter Streit | 1996-02-13 |
| 5414290 | IGBT with self-aligning cathode pattern and method for producing it | — | 1995-05-09 |
| 5349213 | Turn-off power semiconductor device | — | 1994-09-20 |
| 5243201 | MOS-controlled thyristor MCT | — | 1993-09-07 |
| 5144400 | Power semiconductor device with switch-off facility | — | 1992-09-01 |
| 5105244 | Gate turn-off power semiconductor component | — | 1992-04-14 |
| 5040042 | Bidirectional semiconductor component that can be turned off | Thomas Stockmeier | 1991-08-13 |
| 4985741 | MOS-controlled bipolar power semiconductor component | Thomas Stockmeier | 1991-01-15 |
| 4975782 | Field effect controlled, bipolar power semiconductor component with silicide layer | — | 1990-12-04 |
| 4967255 | Controllable power semiconductor component | Horst Gruning | 1990-10-30 |
| 4954869 | MOS-controlled thyristor (MCT) | — | 1990-09-04 |