Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Thermal control of semiconductor wafer during reactive ion etching

Thermal control of semiconductor wafer during reactive ion etching

US Patent 5609720 · Granted Mar 11, 1997

Estimated economic value: $18,158,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Backside reactive inhibition gas2025
Removable showerhead faceplate for semiconductor processing tools2025
Metal deposition2025
Counterbalance forklift truck2021
Wafer support pedestal with wafer anti-slip and anti-rotation features2019
Vapor delivery method and apparatus for solid and liquid precursors2018
Systems and methods for measuring entrained vapor2018
Method and apparatus for physical confinement of a liquid meniscus over a semico2017
Airflow management for low particulate count in a process tool2016
Methods for verifying gas flow rates from a gas supply system into a plasma proc2016
High throughput cleaner chamber2015
Apparatus and method for controlling plasma potential2015