Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral field-effect-controlled semiconductor device on insulating substrate

Lateral field-effect-controlled semiconductor device on insulating substrate

US Patent 5587595 · Granted Dec 24, 1996

Estimated economic value: $543,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power device integration on a common substrate2023
Schottky power mosfet2023
Power device integration on a common substrate2022
Schottky power MOSFET2020
Power device on bulk substrate2019
Power device integration on a common substrate2019
Fast switching IGBT with embedded emitter shorting contacts and method for makin2018
Power device integration on a common substrate2017
Power device integration on a common substrate2016
Fast switching IGBT with embedded emitter shorting contacts and method for makin2016
Trench-gated MIS devices2016
MOS transistor device in common source configuration2016