Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same

Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same

US Patent 5553017 · Granted Sep 3, 1996

Estimated economic value: $12,450,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Auto-referenced memory cell read techniques2025
Systems and techniques for accessing multiple memory cells concurrently2025
Semiconductor packages with patterns of die-specific information2024
Auto-referenced memory cell read techniques2024
P2X3 receptor antagonists2024
Systems and techniques for accessing multiple memory cells concurrently2023
Substituted [1,2,4]triazolo[4,3-a]pyrazines as modulators of mGlu5 receptors2023
Semiconductor packages with indications of die-specific information2022
Heterocyclylmethylidene derivatives and their use as modulators of mGluR5 recept2022
Redundant cloud memory storage for a memory subsystem2022
Systems and techniques for accessing multiple memory cells concurrently2022
Auto-referenced memory cell read techniques2022