Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making complementary bipolar polysilicon emitter devices

Method of making complementary bipolar polysilicon emitter devices

US Patent 5541120 · Granted Jul 30, 1996

Estimated economic value: $6,639,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High speed manipulation of non-uniform objects2025
Stress-reduced silicon photonics semiconductor wafer2025
Optical fiber pitch adjustment2025
High speed manipulation of non-uniform objects2023
High speed manipulation of non-uniform ojects2020
Spike implanted Schottky diode2018
High performance isolated vertical bipolar junction transistor and method for fo2017
High performance isolated vertical bipolar junction transistor and method for fo2016
Schottky diode with minimal vertical current flow2011
Thin film resistors integrated at two different metal single die2011
Thin film resistors integrated at two different metal interconnect levels of sin2008
Schottky diode with minimal vertical current flow2008