Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon

Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon

US Patent 5516404 · Granted May 14, 1996

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Buried power rails integrated with decoupling capacitance2025
Apparatus and method for detecting a state of a road surface2025
III-N diodes with n-doped wells and capping layers2025
Semiconductor structure and method for forming a semiconductor structure2025
Variable capacitance device with multiple two-dimensional electron gas (2DEG) la2024
Device for detecting water on a surface and a method for detecting water on a su2023
Group III-nitride Schottky diode2023
Fluid sensor2022
Group III-nitride silicon controlled rectifier2022
Variable capacitance device with multiple two-dimensional electron gas (2DEG) la2022
Group III-nitride antenna diode2022
Circuit for electrostatic discharge protection for wide frequency range multi-ba2022