Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making reliable metal leads in high speed LSI semiconductors using thermoconductive layers

Method of making reliable metal leads in high speed LSI semiconductors using thermoconductive layers

US Patent 5510293 · Granted Apr 23, 1996

Estimated economic value: $10,771,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for manufacturing a ferroelectric capacitor having improved polarization 2002
Twisted bit line structure and method for making same2002
Twisted bit line structures and method for making same2001
Method for manufacturing ferroelectric capacitor and method for manufacturing fe2001
Shallow trench isolation formation with sidewall spacer2001
Method for manufacturing metal oxide capacitor and method for manufacturing semi2000
Method for manufacturing dielectric capacitor, dielectric memory device2000
Method of making reliable metal leads in high speed LSI semiconductors using dum1998
Method for forming high dielectric capacitor electrode structure and semiconduct1998
Reliable metal leads in high speed LSI semiconductors using dummy leads1998
Reliability of metal leads in high speed LSI semiconductors using dummy vias1997
Capacitor, electrode or wiring structure, and semi conductor device1997