Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current

Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current

US Patent 5430315 · Granted Jul 4, 1995

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High-voltage transistor with multi-layer conduction region2004
High-voltage transistor with multi-layer conduction region2004
Method of making a high-voltage transistor with buried conduction regions2004
High-voltage transistor with multi-layer conduction region2004
High-voltage transistor with multi-layer conduction region2004
Method of making a high-voltage transistor with buried conduction regions2004
High-voltage transistor with multi-layer conduction region2003
High current field-effect transistor2003
High-voltage transistor with multi-layer conduction region2003
High-voltage transistor with multi-layer conduction region2001
Method of making a high-voltage transistor with multiple lateral conduction laye2001
Method of making high voltage transistor1995