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Home › Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer

Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer

US Patent 5385804 · Granted Jan 31, 1995

Estimated economic value: $9,170,000 ⓘ

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