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Home › Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film

Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film

US Patent 5346856 · Granted Sep 13, 1994

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