Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making planar heterobipolar transistor having trenched isolation of the collector terminal

Method of making planar heterobipolar transistor having trenched isolation of the collector terminal

US Patent 5340755 · Granted Aug 23, 1994

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing a ferroelectric layer2004
Method for fabricating an integrated semiconductor product2003
Power transistor cell2003
Plasma doping for DRAM with deep trenches and hemispherical grains2002
Low leakage, low capacitance isolation material2002
Contact between a monocrystalline silicon region and a polycrystalline silicon s2001
Stack capacitor with improved plug conductivity2001
Method for fabricating a trench capacitor2001
Method for producing a polycrystalline silicon structure and polycrystalline sil2000
Method of forming stack capacitor with improved plug conductivity2000
Bottle-shaped trench capacitor with epi buried layer2000
Method for forming trench capacitors in an integrated circuit1999