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Home › Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor

Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor

US Patent 5306660 · Granted Apr 26, 1994

Estimated economic value: $8,230,000 ⓘ

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