Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semi-insulating cobalt doped indium phosphide grown by MOCVD

Semi-insulating cobalt doped indium phosphide grown by MOCVD

US Patent 5045496 · Granted Sep 3, 1991

Estimated economic value: $6,634,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Technique for doping mercury cadmium telluride MOCVD grown crystalline materials1994
Technique for doping MOCVD grown crystalline materials using free radical transp1993
Display system and method for constructing and editing a hierarchical arrangemen1988