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Home › Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process

Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process

US Patent 5284800 · Granted Feb 8, 1994

Estimated economic value: $9,766,000 ⓘ

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