Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for reducing foreign matter on a wafer etched in a reactive ion etching process

Method for reducing foreign matter on a wafer etched in a reactive ion etching process

US Patent 5221425 · Granted Jun 22, 1993

Estimated economic value: $8,462,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

LED circuit board layout for low profile lighting fixture2025
Switch for a lighting system2025
Switch for a lighting system2024
Pulsing high intensity narrow spectrum light2023
Ceiling fan that controls thermostat based on presence information2022
Switch for a lighting system2022
LED circuit board layout for low profile lighting fixture2021
LED circuit board layout for low profile lighting fixture2021
Antimicrobial backlit device2020
LED circuit board layout for low profile lighting fixture2020
Test structure for monitoring interface delamination2018
Metal wires of a stacked inductor2017