Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming semiconductor stalk structure by epitaxial growth in trench

Method of forming semiconductor stalk structure by epitaxial growth in trench

US Patent 5034342 · Granted Jul 23, 1991

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hull mounted, steerable marine drive with trim actuation2017
Power management system that includes a wet exhaust system2016
Hull mounted, steerable marine drive with trim actuation2016
In-vehicle lift mechanism2009
Apparatus and method for determining leakage current between a first semiconduct2004
Leveling ramp assembly for slide-out room2004
Method of making a semiconductive structure useful as a pressure sensor1991
Method of making a semiconductive structure useful as a pressure sensor1991
Method of making a semiconductive structure useful as a pressure sensor1991
Monolithic pressure sensitive integrated circuit1990
Semiconductive stalk structure1990
Semiconductive stalk structure1990