Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › TiW diffusion barrier for AuZn ohmic contact to P-Type InP

TiW diffusion barrier for AuZn ohmic contact to P-Type InP

US Patent 5015603 · Granted May 14, 1991

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vacuum transistor structure using graphene edge field emitter and screen electro2019
Strained InGaAs quantum wells for complementary transistors2015
Low-resistivity p-type GaSb quantum wells2015
Antimonide-based compound semiconductor with titanium tungsten stack2015
Antimonide-based compound semiconductor with titanium tungsten stack2015
Strained InGaAs quantum wells for complementary transistors2014
n- and p-channel field effect transistors with single quantum well for complemen2014
n- and p-channel field effect transistors with single quantum well for complemen2014
Micromechanical chemical sensors with multiple chemoselective resonant elements 2013
N- and p-channel field-effect transistors with single quantum well for complemen2013
N- and p-channel field-effect transistors with single quantum well for complemen2013
Antimonide-based compound semiconductor with titanium tungsten stack2013