Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10192979 | Vacuum transistor structure using graphene edge field emitter and screen electrode | Jonathan L. Shaw, Kevin Jensen, James G. Champlain, Bradford B. Pate, Byoung-don Kong +2 more | 2019-01-29 |
| 9054169 | Strained InGaAs quantum wells for complementary transistors | Brian R. Bennett, Theresa F. Chick, James G. Champlain | 2015-06-09 |
| 9006708 | Low-resistivity p-type GaSb quantum wells | Brian R. Bennett, Theresa F. Chick, Mario Ancona | 2015-04-14 |
| 8927354 | Antimonide-based compound semiconductor with titanium tungsten stack | Yeong-Chang Chou, Jay D. Crawford, Jane Lee, Jeffrey Ming-Jer Yang, Nicolas A. Papanicolaou | 2015-01-06 |
| 8884265 | Strained InGaAs quantum wells for complementary transistors | Brian R. Bennett, Theresa F. Chick, James G. Champlain | 2014-11-11 |
| 8652959 | n- and p-channel field effect transistors with single quantum well for complementary circuits | Brian R. Bennett, Mario Ancona, James G. Champlain, Nicolas A. Papanicolaou | 2014-02-18 |
| 8461664 | N- and p-channel field-effect transistors with single quantum well for complementary circuits | Brian R. Bennett, Mario Ancona, James G. Champlain, Nicolas A. Papanicolaou | 2013-06-11 |
| 8421121 | Antimonide-based compound semiconductor with titanium tungsten stack | Yeong-Chang Chou, Jay D. Crawford, Jane Lee, Jeffrey Ming-Jer Yang, Nicolas A. Papanicolaou | 2013-04-16 |
| 8076700 | P-N junction for use as an RF mixer from GHZ to THZ frequencies | Richard Magno, Mario Ancona, James G. Champlain, Harvey S. Newman | 2011-12-13 |
| 7635879 | InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors | Brian R. Bennett, Paul M. Campbell, Richard Magno | 2009-12-22 |
| 7388235 | High electron mobility transistors with Sb-based channels | Brian R. Bennett, Richard Magno, Nicholas A Papanicolou, Brad P. Tinkham | 2008-06-17 |
| 6448648 | Metalization of electronic semiconductor devices | — | 2002-09-10 |
| 6316124 | Modified InAs hall elements | Walter Kruppa, Brian R. Bennett, Ming-Jey Yang | 2001-11-13 |
| 5798540 | Electronic devices with InAlAsSb/AlSb barrier | Walter Kruppa, Doewon Park, Brian R. Bennett | 1998-08-25 |
| 5196358 | Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers | — | 1993-03-23 |
| 5015603 | TiW diffusion barrier for AuZn ohmic contact to P-Type InP | Nicolas A. Papanicolaou, Tung H. Weng | 1991-05-14 |
| 4924285 | Monolithic multichannel detector amplifier arrays and circuit channels | Gordon W. Anderson, Harry Dietrich, David I. Ma, Ingham A. G. Mack, Nicolas A. Papanicolaou | 1990-05-08 |
| 4816881 | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP | Nicolas A. Papanicolaou, Tung H. Weng | 1989-03-28 |
| H291 | Fully ion implanted junction field effect transistor | — | 1987-06-02 |