{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Photo-enhanced pyrolytic MOCVD growth of group II-VI materials", "item": "https://www.patentleaderboard.com/patent/4904337"}]}
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Home › Photo-enhanced pyrolytic MOCVD growth of group II-VI materials

Photo-enhanced pyrolytic MOCVD growth of group II-VI materials

US Patent 4904337 · Granted Feb 27, 1990

Estimated economic value: $5,062,000 ⓘ

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