Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device comprising a capacitor and a buried passivation layer

Semiconductor device comprising a capacitor and a buried passivation layer

US Patent 4897707 · Granted Jan 30, 1990

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a semiconductor device, in which isolated conductor trac1994
Semiconductor device having an IGFET with diffused gate connection1993
Method of manufacturing a semiconductor device by maskless pn junction isolation1992
Method of manufacturing a bipolar transistor1991
Method of making semiconductor device comprising a capacitor and a buried passiv1991
Method of making semiconductor device comprising a capacitor and a buried passiv1991
Method of manufacturing a semiconductor Bi-CMOS device1991
Method of manufacturing a semiconductor device1989
Semiconductor device having silicon conductor tracks connected by a metal silici1987
Method of manufacturing a semiconductor device1985
Method of manufacturing a semiconductor device, in which patterns are formed in 1985