Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a semiconductor device, in which patterns are formed in a layer of silicon nitride by means of ion implantation

Method of manufacturing a semiconductor device, in which patterns are formed in a layer of silicon nitride by means of ion implantation

US Patent 4514251 · Granted Apr 30, 1985

Estimated economic value: $488,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Noise suppression in an open MR apparatus2006
Manufacture of trench-gate semiconductor devices2002
"Method of manufacturing semiconductor devices with ""chip size package"""2001
Semiconductor device comprising a glass supporting body onto which a substrate w2001
Radiation-sensitive semiconductor device and method of manufacturing same2001
Semiconductor device with semiconductor elements formed in a layer of semiconduc2000
Semiconductor body with a substrate glued to a support body1998
Method of manufacturing semiconductor devices with semiconductor elements formed1998
Method of manufacturing a device, by which method a substrate with semiconductor1998
Method of manufacturing a semiconductor device for surface mounting1998
Semiconductor device with a carrier body on which a substrate with a semiconduct1998
Method of manufacturing a hybrid integrated circuit1998