Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor

Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor

US Patent 4742014 · Granted May 3, 1988

Estimated economic value: $7,175,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Well resistors and polysilicon resistors2016
Well resistors and polysilicon resistors2015
Method for making very shallow junctions in silicon devices2000
Process for simultaneously fabricating isolation structures for bipolar and CMOS1994
Self-aligned tungsten-filled via1993
Method for making a shallow junction bipolar transistor and transistor formed th1993
Methods for and products having self-aligned conductive pillars on interconnects1992
Polysilicon self-aligned bipolar device including trench isolation and process o1992
Method for forming a germanium layer and a heterojunction bipolar transistor1992
Process for simultaneously fabricating isolation structures for bipolar and CMOS1991
Merged bipolar and complementary metal oxide semiconductor transistor device1991
Self-aligned tungsten-filled via process and via formed thereby1991