Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming high resistivity regions in GaAs by deuteron implantation

Method of forming high resistivity regions in GaAs by deuteron implantation

US Patent 4394180 · Granted Jul 19, 1983

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ceramic in replacement components2010
Life extension of chromium coatings and chromium alloys2009
Apparatus and method for manufacturing optical objects2009
Method for measuring contour variations2008
Apparatus and method of measuring defects in an ion implanted wafer by heating t2008
Catalytic coatings and fuel cell electrodes and membrane electrode assemblies ma2007
Ceramic in replacement components2007
Methods for integrated implant monitoring2007
Real-time in-line testing of semiconductor wafers2006
Real-time in-line testing of semiconductor wafers2005
Life extension of chromium coating and chromium alloys2004
Catalytic coatings and fuel cell electrodes and membrane electrode assemblies ma2003