Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for fabricating a bipolar transistor

Process for fabricating a bipolar transistor

US Patent 4338138 · Granted Jul 6, 1982

Estimated economic value: $25,464,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetic tunnel junction for MRAM applications2016
Structure and method to fabricate high performance MTJ devices for spin-transfer2016
Magnetic tunnel junction for MRAM applications2015
Magnetic element with improved out-of-plane anisotropy for spintronic applicatio2015
Bottom electrode for MRAM device2015
Spin torque transfer magnetic tunnel junction fabricated with a composite tunnel2014
Magnetic tunnel junction for MRAM applications2014
High performance MTJ element for conventional MRAM and for STT-RAM and a method 2014
Method of forming a spin-transfer torque random access memory (STT-RAM) device2014
Underlayer for high performance magnetic tunneling junction MRAM2014
Structure and method to fabricate high performance MTJ devices for spin-transfer2013
Array of magnetic tunneling junction film structures with process determined in-2013