Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ion-implanted evaporated germanium layers as n.sup.+ contacts to GaAs

Ion-implanted evaporated germanium layers as n.sup.+ contacts to GaAs

US Patent 4298403 · Granted Nov 3, 1981

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Formation of epitaxial si-ge heterostructures by solid phase epitaxy1990
Method of making self-aligned GaAs/AlGaAs FET's1990
Method of making self-aligned GaAs/AlGaAs FET's1990
Self-aligned gaas fet with low 1/f noise1989
Tunnett diode and method of making1986
Tunnett diode and method of making1986
Refractory passivated ion-implanted GaAs ohmic contacts1982
Refractory passivated ion-implanted GaAs ohmic contacts1982
Low-barrier-height epitaxial Ge-GaAs mixer diode1982
Low-barrier-height epitaxial Ge-GaAs mixer diode1982
Semiconductor encapsulant for annealing ion-implanted GaAs1981
Semiconductor encapsulant for annealing ion-implanted GaAs1981