Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4975387 | Formation of epitaxial si-ge heterostructures by solid phase epitaxy | Sharka M. Prokes, Wen-Fa Tseng | 1990-12-04 |
| 4927782 | Method of making self-aligned GaAs/AlGaAs FET's | John E. Davey | 1990-05-22 |
| H29 | Tunnett diode and method of making | John E. Davey | 1986-03-04 |
| 4330343 | Refractory passivated ion-implanted GaAs ohmic contacts | John E. Davey | 1982-05-18 |
| 4316201 | Low-barrier-height epitaxial Ge-GaAs mixer diode | John E. Davey | 1982-02-16 |
| 4298403 | Ion-implanted evaporated germanium layers as n.sup.+ contacts to GaAs | John E. Davey | 1981-11-03 |
| 4267014 | Semiconductor encapsulant for annealing ion-implanted GaAs | John E. Davey, Harry Dietrich | 1981-05-12 |
| 4263605 | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices | John E. Davey | 1981-04-21 |
| 4226649 | Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques | John E. Davey | 1980-10-07 |
| 4188710 | Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films | John E. Davey | 1980-02-19 |