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Home › Passivating composite for a semiconductor device comprising a silicon nitride (Si.sub.1 3N.sub.4) layer and phosphosilicate glass (PSG) layer

Passivating composite for a semiconductor device comprising a silicon nitride (Si.sub.1 3N.sub.4) layer and phosphosilicate glass (PSG) layer

US Patent 4273805 · Granted Jun 16, 1981

Estimated economic value: $1,488,000 ⓘ

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