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Home › Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching

Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching

US Patent 4229233 · Granted Oct 21, 1980

Estimated economic value: $15,554,000 ⓘ

Assignee

IBM

Inventors

Thomas Hansen (12 patents)
Claude Johnson, Jr. (3 patents)
Robert R. Wilbarg (4 patents)

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