Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making high aspect ratio openings in a semiconductor device using ion implanted regrown cladding mask

Method of making high aspect ratio openings in a semiconductor device using ion implanted regrown cladding mask

US Patent 12512366 · Granted Dec 30, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device and method of making thereof by non-conformal se2025
Three-dimensional memory device and method of making thereof by non-conformal se2025
Three-dimensional memory device and method of making thereof by non-conformal se2025
Three-dimensional memory device including discrete charge storage elements and m2025
Three-dimensional memory device and method of making thereof using sacrificial m2025
Three-dimensional memory device and method of making thereof using sacrificial m2025
Method of making a three-dimensional memory device using composite hard masks fo2025
Method of making a three-dimensional memory device using composite hard masks fo2025
Memory device containing composition-controlled ferroelectric memory elements an2025
Memory device containing composition-controlled ferroelectric memory elements an2025
Three-dimensional memory device containing ferroelectric-assisted memory element2025
Lighter2025