Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layers

Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layers

US Patent 12507600 · Granted Dec 23, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetic memory device and manufacturing method thereof2025
Low power consumption feedback circuit for power supply device2025
Memory device and fabrication method thereof2025
Memory device and fabrication method thereof2025
Memory device and fabrication method thereof2025
Memory cell, memory device and manufacturing method thereof2025
Semiconductor memory devices with electrically isolated stacked bit lines and me2025
Semiconductor memory devices with electrically isolated stacked bit lines and me2025
System and method for bonding semiconductor devices2025
Control circuit, memory system and control method2025
Semiconductor device, memory cell and method of forming the same2025
Transistor with a negative capacitance and a method of creating the same2025