Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure with source/drain multi-layer structure and method for forming the same

Semiconductor structure with source/drain multi-layer structure and method for forming the same

US Patent 12446255 · Granted Oct 14, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Selective formation of titanium silicide and titanium nitride by hydrogen gas co2025
Semiconductor device with backside power rail and methods of fabrication thereof2025
Integrated circuit device2025
Semiconductor device and method2025
Semiconductor device and method2025
Semiconductor device and method2025
Method of manufacturing semiconductor structure using multi-layer hard mask2025
Method of forming gate structures for nanostructures2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device and manufacturing method thereof2025
Lighting device with regions of differing spectral ranges2025
Semiconductor package having flow-guiding grooves and circuit board thereof2025