Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory devices having one-time-programmable fuses and/or antifuses formed from thin-film transistors

Memory devices having one-time-programmable fuses and/or antifuses formed from thin-film transistors

US Patent 12408332 · Granted Sep 2, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Decoding architecture for memory devices2025
Decoding architecture for memory devices2025
Decoding architecture for memory devices2025
Reading a multi-level memory cell2025
Memory cell formation in three dimensional memory arrays using atomic layer depo2025
Memory cell formation in three dimensional memory arrays using atomic layer depo2025
Accessing memory cells in a vertical memory array2025
Accessing memory cells in a vertical memory array2025
Pillar and word line plate architecture for a memory array2025
Pillar and word line plate architecture for a memory array2025
Varying-polarity read operations for polarity-written memory cells2025
Unipolar programming of memory cells2025