Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices

Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices

US Patent 12329044 · Granted Jun 10, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Microfluidic chips with one or more vias filled with sacrificial plugs2025
Suppression of void-formation of PCM materials2025
In-situ low temperature dielectric deposition and selective trim of phase change2025
System, method and apparatus for sensor insertion2025
Phase-change memory cell with mixed-material switchable region2025
Method for producing flexible tooling for casting a ceramic core2025
Method and apparatus for insertion of a sensor2025
Methods for etching metal films using plasma processing2024
Fill-in confined cell PCM devices2024
Integration of selector on confined phase change memory2024
Embedded heater in a phase change memory material2024
Phase change memory cell with ovonic threshold switch2024