Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same

Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same

US Patent 12262560 · Granted Mar 25, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of fabricating the same2025
Semiconductor device including interconnect structure with metal bridge pattern 2025
Integrated circuit devices including stacked field effect transistors and method2025
Semiconductor device including backside contact structure with silicide layer fo2025
Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional sta2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Transistor stacks having insulating spacers, and related fabrication methods2025
Integrated circuit devices including metal lines spaced apart from metal vias, a2025
Three-dimensional stacked semiconductor device including simplified source/drain2025
Apparatus and method for autonomous power generation and battery recharging in e2025
Integrated circuit devices including a metal resistor and methods of forming the2025